6a triac s main features: description suitable for ac switching operations, the bta/ btb06 series can be used as an on/off function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,... the snubberless and logic level versions (bta/ btb...w) are specially recommended for use on inductive loads, thanks to their high commutation performances. by using an internal ceramic pad, the bta series provides voltage insulated tab (rated at 2500v rms) complying with ul standards (file ref.: e81734) symbol value unit i t(rms) 6a v drm /v rrm 600 and 800 v i g (q 1 ) 5 to 50 ma absolute maximum ratings symbol parameter value unit i t(rms) rms on-state current (full sine wave) to-220ab tc = 110c 6 a to-220ab ins. tc = 105c i tsm non repetitive surge peak on-state current (full cycle, tj initial = 25c) f = 50 hz t = 20 ms 60 a f = 60 hz t = 16.7 ms 63 i 2 ti 2 t value for fusing tp = 10 ms 21 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt , tr 100 ns f = 120 hz tj = 125c 50 a/s i gm peak gate current tp = 20 s tj = 125c 4 a p g(av) average gate power dissipation tj = 125c 1 w t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c g a2 a1 to-220ab (btb06) to-220ab insulated (bta06) bta/btb06 series 2014-6-9 1 www.kersemi.com
(tj = 25c, unless otherwise specified) n snubberless? and logic level (3 quadrants) n standard (4 quadrants) static characteristics note 1: minimum igt is guaranted at 5% of igt max. note 2: for both polarities of a2 referenced to a1 symbol test conditions quadrant bta/btb06 unit tw sw cw bw i gt (1) v d = 12 v r l = 30 w i - ii - iii max. 5 10 35 50 ma v gt i - ii - iii max. 1.3 v v gd v d = v drm r l = 3.3 k w tj = 125c i - ii - iii min. 0.2 v i h (2) i t = 100 ma max.10153550ma i l i g = 1.2 i gt i - iii max. 10 25 50 70 ma ii 15 30 60 80 dv/dt (2) v d = 67 %v drm gate open tj = 125c min. 20 40 400 1000 v/s (di/dt)c (2) (dv/dt)c = 0.1 v/s tj = 125c min. 2.7 3.5 - - a/ms (dv/dt)c = 10 v/s tj = 125c 1.2 2.4 - - without snubber tj = 125c - - 3.5 5.3 symbol test conditions quadrant bta/btb06 unit cb i g (1) v d = 12 v r l = 30 w i - ii - iii iv max. 25 50 50 100 ma v gt all max. 1.3 v v gd v d = v drm r l = 3.3 k w tj = 125c all min. 0.2 v i h (2) i t = 500 ma max. 25 50 ma i l i g = 1.2 i gt i - iii - iv max. 40 50 ma ii 80 100 dv/dt (2) v d = 67 %v drm gate open tj = 125c min. 200 400 v/s (dv/dt)c (2) (di/dt)c = 2.7 a/ms tj = 125c min. 5 10 v/s symbol test conditions value unit v t (2) i tm = 5.5 a tp = 380 s tj = 25c max. 1.55 v v to (2) threshold voltage tj = 125c max. 0.85 v r d (2) dynamic resistance tj = 125c max. 60 m w i drm i rrm v drm = v rrm tj = 25c max. 5a tj = 125c 1 ma electrical characteristics bta/btb06 series 2014-6-9 2 www.kersemi.com
product selector btb: non insulated to-220ab package ordering information other information note: xxx = voltage, y = sensitivity, z = type symbol parameter value unit r th(j-c) junction to case (ac) to-220ab 1.8 c/w to-220ab insulated 2.7 r th(j-a) junction to ambient to-220ab to-220ab insulated 60 c/w part number voltage (xxx) sensitivity type package 600 v 800 v bta/btb06-xxxb x x 50 ma standard to-220ab bta/btb06-xxxbw x x 50 ma snubberless to-220ab bta/btb06-xxxc x x 25 ma standard to-220ab bta/btb06-xxxcw x x 35 ma snubberless to-220ab bta/btb06-xxxsw x x 10 ma logic level to-220ab bta/btb06-xxxtw x x 5 ma logic level to-220ab part number marking weight base quantity packing mode bta/btb06-xxxyz bta/btb06-xxxyz 2.3 g 250 bulk bta/btb06-xxxyzrg bta/btb06-xxxyz 2.3 g 50 tube bt a 06 - 600 bw (rg) triac series insulation: a: insulated b: non insulated current: 6a sensitivity & type b: 50ma standard bw: 50ma snubberless c: 25ma standard cw: 35ma snubberless sw: 10ma logic level tw: 5ma logic level voltage: 600: 600v 800: 800v packing mode blank: bulk rg: tube bta/btb06 series 2014-6-9 3 www.kersemi.com thermal resistances
fig. 1: maximum power dissipation versus rms on-state current (full cycle). fig. 2: rms on-state current versus case temperature (full cycle). fig. 3: relative variation of thermal impedance versus pulse duration. fig. 4: on-state characteristics (maximum values). fig. 5: surge peak on-state current versus number of cycles. fig. 6: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of i2t. 0123456 0 1 2 3 4 5 6 7 8 p (w) it(rms)(a) 0 25 50 75 100 125 0 1 2 3 4 5 6 7 it(rms) (a) bta btb tc(c) 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 1e-2 1e-1 1e+0 k=[zth/rth] zth(j-c) zth(j-a) tp(s) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 itm (a) tj=tj max tj max. vto = 0.85 v rd = 60 m w vtm(v) 1 10 100 1000 0 10 20 30 40 50 60 70 itsm (a) non repetitive tj initial=25c repetitive tc=105c one cycle t=20ms number of cycles 0.01 0.10 1.00 10.00 10 100 1000 tp (ms) itsm (a), i2t (a2s) tj initial=25c itsm i2t di/dt limitation: 50a/s bta/btb06 series 2014-6-9 4 www.kersemi.com
fig. 7: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 8-1: relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values). snubberless & logic level types fig. 8-2: relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values). standard types fig. 9: relative variation of critical rate of decrease of main current versus junction temperature. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 igt,ih,il[tj] / igt,ih,il [tj=25c] igt ih & il tj(c) 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (di/dt)c [(dv/dt)c] / specified (di/dt)c bw/cw sw tw (dv/dt)c (v/s) 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (di/dt)c [(dv/dt)c] / specified (di/dt)c c b (dv/dt)c (v/s) 0 25 50 75 100 125 0 1 2 3 4 5 6 (di/dt)c [tj] / (di/dt)c [tj specified] tj(c) bta/btb06 series 2014-6-9 5 www.kersemi.com
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